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c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 www. ruichips .com ru 140n10 n - channel advanced power mosfet features pin description symbol parameter r ating unit common ratings ( t a =25c unless otherwise noted) v dss drain - source voltage 10 0 v gss gate - source voltage 25 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25c 140 a mounted on large heat sink i dp 300 m s pulsed drain current tested t c = 25 c 560 t c =25c 140 i d continue drain current t c = 100 c 100 a t c =25c 250 p d maximum power dissipation t c = 100 c 125 w r q jc thermal resistance - junction to c ase 0. 6 r q j a thermal resistance - junction to ambient 6 2.5 c/w drain - source avalanche ratings storage temperature range - 55 to 150 e as avalanche energy , single pulsed 1 .1 j absolute maximum ratings ? 10 0 v/ 14 0 a r ds ( on ) = 6 .5 m w ( typ .) @ v gs = 10 v ? ultra low on - resistance ? low gate charge ? fast switching and fully avalanche rated ? 100% avalanche tested applications switching applications to - 220 to - 220f to - 247 to - 263 n - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 2 www. ruichips .com ru 140n10 electrical characteristics ( t a =25 c unless otherwise noted) ru 140n10 symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown vol tage v gs =0v, i ds =250 m a 10 0 v v ds = 10 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v g s , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 40 a 6.5 8 m w notes : current limited by package . pulse width limited by safe operating area . i as = 55 a, v dd = 50 v, r g = 47 , starting t j = 25c . pulse test ; p ulse width 4 00 m s, duty cycle 2% . guaranteed by design, not subject to produ ction testing . d iode characteristics v sd diode forward voltage i sd = 40 a, v gs =0v 1.2 v t rr reverse recovery time 90 ns q rr reverse recovery charge i sd = 40 a, dl sd /dt=100a/ m s 20 0 nc dynamic charac teristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.6 w c iss input capacitance 7 550 c oss output capacitance 8 10 c rss reverse transfer capacitance v gs =0v, v ds = 25 v, frequency=1.0mhz 2 5 0 pf t d ( on ) turn - on delay time 30 t r turn - on rise time 2 10 t d ( off ) turn - off delay time 1 6 0 t f turn - off fall time v dd = 5 0 v,i ds = 7 0 a, v g en = 10v, r g = 2.5 w 1 2 0 ns gate charge characteristics q g total gate charge 135 175 q gs gate - source charge 3 0 q gd g ate - drain charge v ds = 80 v, v gs = 10v, i ds = 7 0 a 4 5 nc
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 3 www. ruichips .com ru 140n10 typical characteristics power dissipation drain current ptot - power(w) i d - drain current (a) tj - junction temperature (c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 4 www. ruichips .com ru 140n10 typical characteristics output characteristics dr ain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance normalized gate threshold vol tage rds(on) - on - resistance ( m ) normalized gate - source voltage (v) vgs - gate - source voltage (v) tj - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 5 www. ruichips .com ru 140n10 typical characteristics drain - source on resistance source - drain di ode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 6 www. ruichips .com ru 140n10 avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 7 www. ruichips .com ru 140n10 ord ering and marking information ru 140n10 package (available) r : to - 220; s: to - 263 ; q: to - 247 operating temperature range c : - 55 to 175 oc assembly material g : green & lead free device packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 8 www. ruichips .com ru 140n10 package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0 .020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10. 10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 9 www. ruichips .com ru 140n10 to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm i nch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0. 77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 10 www. ruichips .com ru 140n10 to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 r ef a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0.000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev. a C sep ., 2010 11 www. ruichips .com ru 140n10 customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.c om editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com

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